The Effect of Electronic Properties of Anodized and Hard Anodized Ti and Ti6Al4V on Their Reactivity in Simulated Body Fluid

The electronic properties of barrier and porous layers on Ti Ti6Al4V were studied. Barrier anodic oxides grown to 40 V are both n-type semiconductors with a band gap 3.3 eV 3.4 respectively, in agreement the formation amorphous TiO 2 . Anodizing 200 at 20 mA cm −2 calcium acetate β -glycerol phosphate disodium pentahydrate leads Ca P containing films photoelectrochemical behaviour dependent metallic substrate. A 3.2 flat potential −0.5 vs Ag/AgCl measured for oxide Ti, while optical transitions 2.15 significantly more positive revealed alloy. different rationalized by taking into account presence localized states inside gap, induced incorporation Al from underlaying alloy during hard anodizing process. These responsible reactivity layer simulated body fluid.